## Abstract The effects of electron doping and molecule adsorption on the electronic transport properties of carbon nanotube (CNT) junctions CNT(3,3)/__n__‐CNT(6,0)/CNT(3,3) (__n__ = 1–5) are simulated by first‐principles calculations combined with a non‐equilibrium Green's function technique. The
✦ LIBER ✦
Electronic transport properties of carbon nanotube based metal/semiconductor/metal intramolecular junctions
✍ Scribed by Triozon, François; Lambin, Philippe; Roche, Stephan
- Book ID
- 124169562
- Publisher
- Institute of Physics
- Year
- 2005
- Tongue
- English
- Weight
- 151 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0957-4484
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We have studied current-voltage (I-V ) characteristics of metal-on-tube metal-multiwall carbon nanotubemetal structures as a function of gate voltage. Device resistances ranged from about 10 kV to several MV, depending on the electrode metal and its deposition condition. When the resistance was much