Resistance dependence of transport properties in metal–multiwall carbon nanotube–metal structures

✍ Scribed by Akinobu Kanda; Kazuhito Tsukagoshi; Seiji Uryu; Youiti Ootuka; Yoshinobu Aoyagi

• Book ID: 104305698
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 438 KB
• Volume: 63
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(02)00616-0

✦ Synopsis

We have studied current-voltage (I-V ) characteristics of metal-on-tube metal-multiwall carbon nanotubemetal structures as a function of gate voltage. Device resistances ranged from about 10 kV to several MV, depending on the electrode metal and its deposition condition. When the resistance was much higher than the 2 quantum resistance (R 5 h /4e ¯6.5 kV), samples showed clear Coulomb blockade. We find that the tunnel Q barrier is located in the interface between the MWNT and the metal electrode. As the resistance decreased, the Coulomb oscillations became irregular with respect to the gate voltage, but the high resistance region around V50 and its dependence on gate voltage survived at resistance smaller than 10 kV.