Electron transport properties of boron-doped capped-carbon-nanotube-based molecular junctions
β Scribed by Peng Zhao; DeSheng Liu
- Book ID
- 107372362
- Publisher
- Springer
- Year
- 2010
- Tongue
- English
- Weight
- 811 KB
- Volume
- 55
- Category
- Article
- ISSN
- 1001-6538
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## Abstract The effects of electron doping and molecule adsorption on the electronic transport properties of carbon nanotube (CNT) junctions CNT(3,3)/__n__βCNT(6,0)/CNT(3,3) (__n__β=β1β5) are simulated by firstβprinciples calculations combined with a nonβequilibrium Green's function technique. The
Double-walled carbon and boron nitride hetero-nanotube Boron nitride doping Ab initio molecular dynamics method Electronic band structures a b s t r a c t The effect of boron nitride (BN) doping on electronic properties of armchair double-walled carbon and hetero-nanotubes is studied using ab initi