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Electronic transport in Ru–Si–O and Ir–Si–O amorphous thin films

✍ Scribed by U. Gottlieb; O. Laborde; P.H. Giauque; M.-A. Nicolet; R. Madar


Book ID
108411198
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
92 KB
Volume
60
Category
Article
ISSN
0167-9317

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Thermal stability of amorphous Ti3Si1O8
✍ P.H. Giauque; H.B. Cherry; M.-A. Nicolet 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 137 KB

Films (220 nm-thick) deposited by reactive rf sputtering from a Ti Si target with an argon / oxygen gas mixture were 3 21 annealed for 30 min in vacuum at temperatures between 400 and 9008C. The films were characterized by 2 MeV He backscattering spectrometry and X-ray diffraction to monitor thermal