Films (220 nm-thick) deposited by reactive rf sputtering from a Ti Si target with an argon / oxygen gas mixture were 3 21 annealed for 30 min in vacuum at temperatures between 400 and 9008C. The films were characterized by 2 MeV He backscattering spectrometry and X-ray diffraction to monitor thermal
โฆ LIBER โฆ
The structure of Ce-Si-O thin amorphous films
โ Scribed by A Singh; AM Edwards; SJ Gurman; EA Davis; MC Fairbanks
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 117 KB
- Volume
- 158
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
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