Electronic surface states in GaAs/Ga1 − xAlxAs superlattice: effect of surface location
✍ Scribed by M Stȩślicka; R Kucharczyk; EH El Boudouti; B Djafari-Rouhani; ML Bah; A Akjouj; L Dobrzynski
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 562 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Binding energies of the ground state and of four excited states of a hydrogenic impurity in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite slabs of Ga~\_~AlxAs are calculated using a variational approach. The ground-state binding energy is calculated
The form factors of the electron-phonon interaction for GaAs/Ga \V Al V As single heterostructures have been evaluated using a finite height barrier. The calculations are performed within the extreme quantum limit approximation, assuming for the envelope electronic wavefunction a modified Fang-Howar