Electronic structures of GaAs/AlGaAs concentric double rings in applied electric and magnetic field
β Scribed by Boyong Jia; Zhongyuan Yu; Yumin Liu; Zhihui Chen; Wenjie Yao; Wei Zhao; Han Ye; Hao Feng
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 346 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
By applying pulsed high magnetic fields up to 40 T, we studied magneto-tunneling properties in AIGaAs/GaAs/AIGaAs double-barrier resonant-tunneling devices in a quantum-limit regime. A distinct resonance of tunneling current and a hysteresis of current vs voltage curves which originate from the disc
The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped \(\mathrm{AlGaAs}\) barriers is calculated selfconsistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially