Quantum-limit behavior of magneto-tunneling in an AlGaAs/GaAs/AlGaAs double-barrier structure under high magnetic fields up to 40 T

✍ Scribed by N. Kamata; K. Yamada; N. Miura; L. Eaves

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 253 KB
• Volume: 184
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(93)90360-i

✦ Synopsis

By applying pulsed high magnetic fields up to 40 T, we studied magneto-tunneling properties in AIGaAs/GaAs/AIGaAs double-barrier resonant-tunneling devices in a quantum-limit regime. A distinct resonance of tunneling current and a hysteresis of current vs voltage curves which originate from the discreteness of the density of states and the effect of charge build-up were observed. A self-consistent model of charge build-up in the well layer considering both the 0-and 1-dimensional emitter states was developed, which explained the mechanism of these observations well. It has been shown that the tunneling from the 0-and 1-dimensional emitter states to the 0-dimensional well state determines the magneto-tunneling current and that the Fermi energy oscillation in the quantum-limit regime is consistently understood by the energy configuration of these Landau levels.