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Magneto-tunneling spectroscopy of GaAsAlGaAs double barrier tunneling devices in pulsed high magnetic fields up to 40T

✍ Scribed by N. Miura; K. Yamada; N. Kamata; T. Osada; L. Eaves


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
374 KB
Volume
9
Category
Article
ISSN
0749-6036

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By applying pulsed high magnetic fields up to 40 T, we studied magneto-tunneling properties in AIGaAs/GaAs/AIGaAs double-barrier resonant-tunneling devices in a quantum-limit regime. A distinct resonance of tunneling current and a hysteresis of current vs voltage curves which originate from the disc