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Electronic structure of the (111) and (111) surfaces of GaAs

โœ Scribed by M. Nishida


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
414 KB
Volume
31
Category
Article
ISSN
0038-1098

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Comparison of GaN Buffer Layers Grown on
โœ Kumagai, Y. ;Murakami, H. ;Seki, H. ;Koukitu, A. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 104 KB ๐Ÿ‘ 1 views

Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A