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Electronic structure of silicon-oxygen high polymers

✍ Scribed by Kyozaburo Takeda; Kenji Shiraishi


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
409 KB
Volume
85
Category
Article
ISSN
0038-1098

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Electronic structure of silicon superlat
✍ Srinivasan Krishnamurthy; John A. Moriarty πŸ“‚ Article πŸ“… 1985 πŸ› Elsevier Science 🌐 English βš– 402 KB

Utilizing a new complex-band-structure technique, the electronic structure of model Si-Sil\_xGe x and MOS superlattices have been obtained over a wide range of layer thickness d (11 ~ d ~ 110 A). For d ~ 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations