Electronic structure of silicon superlattices

✍ Scribed by Srinivasan Krishnamurthy; John A. Moriarty

• Publisher: Elsevier Science
• Year: 1985
• Tongue: English
• Weight: 402 KB
• Volume: 1
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(85)90005-9

✦ Synopsis

Utilizing a new complex-band-structure technique, the electronic structure of model Si-Sil_xGe x and MOS superlattices have been obtained over a wide range of layer thickness d (11 ~ d ~ 110 A). For d ~ 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon.