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Electronic Structure of Intrinsic Point Defects in Perovskite-Type Crystals

✍ Scribed by A. V. Fisenko; S. A. Prosandeev; V. P. Sachenko

Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
611 KB
Volume
137
Category
Article
ISSN
0370-1972

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In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and selfinterstitial atoms on {111}-and {113}-habit planes both leading to an extended defect formation in Si crystals.