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Electronic structure of (In,Ga) As(Ga, Al) As strained-layer quantum wells

✍ Scribed by David J. Dunstan; Bernard Gil


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
379 KB
Volume
20
Category
Article
ISSN
0921-5107

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Temperature dependence of the radiative
✍ G.W. 't Hooft; M.R. Leys; H.J. Talen-v.d. Mheen 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 281 KB

The temperature dependence of the radiative recombination coefficient of GaAs-(A1,Ga)As quantum wells grown by MO-VPE was investigated. This was done by measuring the minority carrier lifetime as deduced from photoluminescence decay. The experimental lifetime varies as Ta, where a equals 1.1 for sma