The method of metal-insulator-semiconductor (MIS) structure interface analysis, based on applying a direct current pulse of preset amplitude to a MIS structure, is proposed. The variation of the voltage across the MIS structure is recorded while the current flows. The method allows measurement of in
Electronic structure of a metal-insulator interface
✍ Scribed by G. Bordier; C. Noguera
- Publisher
- Elsevier Science
- Year
- 1991
- Weight
- 74 KB
- Volume
- 251-252
- Category
- Article
- ISSN
- 0167-2584
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