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Electronic structure of (001) AlAs–InAs–GaAs multilayer structures

✍ Scribed by V.R. Velasco; L. Fernández-Alvarez; A. Aldea; S. Vlaev; G. Monsivais; F. Garcı́a-Moliner


Book ID
117218719
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
210 KB
Volume
412-413
Category
Article
ISSN
0039-6028

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Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice