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Electronic stopping dependence of ion beam induced modifications in GaN

✍ Scribed by G. Devaraju; A.P. Pathak; N. Sathish; N. Srinivasa Rao; V. Saikiran; A.I. Titov

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
446 KB
Volume
269
Category
Article
ISSN
0168-583X

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The current study is part of an overarching goal to develop an ion implantation process for producing cyclic actuating elements used in microelectromechanical systems. The damage produced by high-energy ions can be used as a means to selectively suppress the martensitic transformation and bias the m