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Dependence of damage efficiency of ions in diamond on electronic stopping

โœ Scribed by E. Friedland; H.D. Carstanjen; G. Myburg; M.A. Nasr


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
187 KB
Volume
230
Category
Article
ISSN
0168-583X

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It has formerly been shown that low-damage levels, produced during the implantation doping of diamond as a semiconductor, anneal easily while high levels ''graphitize" (above about 5.2 ร‚ 10 15 ions/ cm 2 ). The difference in the defect types and their profiles, in the two cases, has never been direc