A theoretical analysis of the electron capture process in double quantum well heterostructures is presented. It is argued that it is necessary to distinguish between the two physically different cases of a wide separate confinement region and a narrow one. The capture parameters are investigated as
Electronic States of GaN-Based Heterostructures in a Thomas-Fermi Approximation
β Scribed by M.E. Mora-Ramos; L.M. Gaggero-Sager
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 71 KB
- Volume
- 220
- Category
- Article
- ISSN
- 0370-1972
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