Quantum Capture of Injected Electrons in GaN-Based Laser Heterostructures

✍ Scribed by Zakhleniuk, N. A. ;Bennett, C. R. ;Stavrou, V. N. ;Babiker, M. ;Ridley, B. K.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 151 KB
• Volume: 176
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199911)176:1<79::aid-pssa79>3.0.co;2-7

✦ Synopsis

A theoretical analysis of the electron capture process in double quantum well heterostructures is presented. It is argued that it is necessary to distinguish between the two physically different cases of a wide separate confinement region and a narrow one. The capture parameters are investigated as a function of the quantum well width and the electron temperature of injected electrons using different models for the polar optical phonons in double heterostructures. A comparison of the electron capture is made between GaN/AlN and GaAs/AlAs structures. We show that there exist both quantitative and qualitative differences in the behaviour of the capture parameters in these heterostructures.