A Variational Approach for the Calculation of Single Electron States in Semiconductor Heterostructures

✍ Scribed by M.E. Mora-Ramos; M. Toledo-Solano

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 84 KB
• Volume: 232
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200207)232:1<142::aid-pssb142>3.0.co;2-5

✦ Synopsis

A different variational scheme for the calculation of conduction band energy levels is proposed for the study of single electron states in the quasi-two-dimensional gas of semiconducting heterostructures. The method uses a trial potential energy function which essentially results from the local density Thomas-Fermi theory of a two-dimensional gas of interacting electrons. The model potential is then written as a combination of this Hartree contribution plus a typical triangular quantum well. The calculation of the lower electronic states in a AlN/GaN single heterostructure is presented as an application.