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Electronic passivation of silicon surfaces by halogens

โœ Scribed by Hichem M'saad; Jurgen Michel; J. J. Lappe; L. C. Kimerling

Book ID
112822396
Publisher
Springer US
Year
1994
Tongue
English
Weight
506 KB
Volume
23
Category
Article
ISSN
0361-5235

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We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AIGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximat