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Electronic distribution of SiO by x-ray spectroscopy

โœ Scribed by M.T. Costa Lima; C. Senemaud


Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
269 KB
Volume
40
Category
Article
ISSN
0009-2614

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๐Ÿ“œ SIMILAR VOLUMES


Investigation of an Mo/SiO2 interface by
โœ Jonnard, P.; Bonnelle, C.; Bosseboeuf, A.; Danaie, K.; Beauprez, E. ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 89 KB ๐Ÿ‘ 1 views

We have studied the solid/solid interface between Mo and SiO 2 films deposited, respectively, by magnetron d.c. sputtering and plasma-enhanced chemical vapour deposition (PECVD). The sample depth profile was characterized by SIMS. We used electron-induced x-ray emission spectroscopy to characterize