Electronic coupling in InAs/GaAs self-assembled stacked double-quantum-dot systems
β Scribed by Fonseca, L. R. C.; Jimenez, J. L.; Leburton, J. P.
- Book ID
- 118132232
- Publisher
- The American Physical Society
- Year
- 1998
- Tongue
- English
- Weight
- 597 KB
- Volume
- 58
- Category
- Article
- ISSN
- 1098-0121
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π SIMILAR VOLUMES
Electronic coupling effects in self-assembled InAs quantum dots are investigated using capacitance and far-infrared (FIR) spectroscopy. Coupling between different dot-layers is studied using capacitance spectroscopy on samples with double-layers of vertically aligned quantum dots. A strong electrost
Hole emission from single and vertically coupled quantum dots (SQD and VCQD) in InAs/GaAs p-n heterostructures under varied reverse bias and the influence exerted on this process by the Coulomb interaction between the quantum dots and point defects situated near the dots has been studied by capacita