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Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires

✍ Scribed by Jacobs, Benjamin W.; Ayres, Virginia M.; Petkov, Mihail P.; Halpern, Joshua B.; He, Maoqi; Baczewski, Andrew D.; McElroy, Kaylee; Crimp, Martin A.; Zhang, Jiaming; Shaw, Harry C.


Book ID
126110660
Publisher
American Chemical Society
Year
2007
Tongue
English
Weight
204 KB
Volume
7
Category
Article
ISSN
1530-6984

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Structural and Room-Temperature Transpor
✍ Shadi A. Dayeh; Darija Susac; Karen L. Kavanagh; Edward T. Yu; Deli Wang πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 809 KB

## Abstract Here, direct correlation between the microstructure of InAs nanowires (NWs) and their electronic transport behavior at room temperature is reported. Pure zinc blende (ZB) InAs NWs grown on SiO~2~/Si substrates are characterized by a rotational twin along their growth‐direction axis whil