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Electronic structure of wurtzite- and zinc blende-GaN studied by angle-resolved photoemission

✍ Scribed by Takahiro Maruyama; Yutaka Miyajima; Kazutaka Hata; Sung Hwan Cho; Katsuhiro Akimoto; Hajime Okumura; Sadafumi Yoshida; Hiroo Kato

Book ID
107457802
Publisher
Springer US
Year
1998
Tongue
English
Weight
178 KB
Volume
27
Category
Article
ISSN
0361-5235

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Electronic structure of Ga1βˆ’xMnxAs studi
Electronic structure of Ga1βˆ’xMnxAs studied by angle-resolved photoemission spectroscopy
✍ J. Okabayashi; A. Kimura; O. Rader; T. Mizokawa; A. Fujimori; T. Hayashi; M. Tan πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 130 KB

We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The e ect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaA