Electronegativity and π-bonding effects on bond strengths of silicon and germanium
✍ Scribed by D. Quane
- Book ID
- 118908484
- Publisher
- Elsevier Science
- Year
- 1971
- Weight
- 312 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0022-1902
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📜 SIMILAR VOLUMES
Halogen lone pair ionization potentials for the mainfroup IV compounds hl>i~ and MHsCI are corrected for the effects of potential and reiaxnion cneq? usin: the corrcspondinf halogen core binding energies. The corrected data indicate sig-nifican~ pzdr; bondmg in MS4 (for M = 5, Ge and Sn). sknilicant
We have studied the effect of excess charge on the bond strength in the silanes SiH4 and Si2H6 to assess whether charge trapping in a solid-state lattice might promote the technologically important photodegradation of amorphous silicon alloys (the Staebler-Wronski effect). The calculations indicate