Analysis of pπ → dπ bonding in halogen compounds of silicon, germanium and tin
✍ Scribed by William L. Jolly
- Publisher
- Elsevier Science
- Year
- 1983
- Tongue
- English
- Weight
- 247 KB
- Volume
- 100
- Category
- Article
- ISSN
- 0009-2614
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✦ Synopsis
Halogen lone pair ionization potentials for the mainfroup IV compounds hl>i~ and MHsCI are corrected for the effects of potential and reiaxnion cneq? usin: the corrcspondinf halogen core binding energies. The corrected data indicate sig-nifican~ pzdr; bondmg in MS4 (for M = 5, Ge and Sn). sknilicant repulsion benicen the lone pairs and CH3 group in CH3CI. .~nd Iittlc or no pn -dx bonding in SiH,Cl and CeH,CI. ' C.rcen et al. [IO] po-mt out that the orbirals follow an approximae "b.uiccntre" rule. and de Lrzuw and de Lange
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The electron impact and chemical ionisation mass spectra of a number of organometallic derivatives of silicon, germanium, tin and lead, incorporating inter alia 2-bis(trimethylsilyl)methylpyridyl or cyclopentadienyl ligands have been recorded. Representative spectra are presented and illustrate the
## Abstract A series of variously substituted aminosilanes was investigated by ^15^N NMR spectroscopy to obtain further information on the controversial problem of pπ‐dπ interaction in these systems. The ^15^N NMR data are consistent with the ^13^C and ^29^Si results and suggest that the (p‐d)π bac