Electron transport in coupled quantum wells with double-Sided doping
✍ Scribed by G. B. Galiev; V. E. Kaminskii; V. G. Mokerov; V. A. Kul’bachinskii; R. A. Lunin; I. S. Vasil’evskii; A. V. Derkach
- Book ID
- 110134728
- Publisher
- Springer
- Year
- 2003
- Tongue
- English
- Weight
- 79 KB
- Volume
- 37
- Category
- Article
- ISSN
- 1063-7826
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Calculations have been performed on the mobility of electrons in a double quantum well structure in which the barrier separating the two parts of the channel is sufficiently thin to allow tunnelling. The subband structure is completely taken into account in a self-consistent calculation and all sign
An electromagnetic propagator formalism is used to calculate the local field in a quantum-well structure consisting of two electronically coupled identical wells each containing only one bound state. Therefore, the photon-drag current, arising as a result of the nonlinear response to the prevailing
With far-infrared Fourier transform spectroscopy we study the subband structure of electrons in two modulation doped GaAs/Ga,-,Al,As quantum wells which are coupled through a thin AlAs barrier grown in the center of the active GaAs layer. To facilitate the interpretation of the experimental results
We study the electron-electron interaction induced energy-dependent inelastic carrier relaxation processes of fast electrons and their corresponding lifetimes in doped semiconductor coupled double quantum well nanostructures within the two subband approximation at zero temperature. The lifetime of t