✦ LIBER ✦

Fast electron relaxation times in coupled double quantum well structures

✍ Scribed by Marcos R.S. Tavares; G.-Q. Hai

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 91 KB
Volume: 13
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(02)00285-0

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✦ Synopsis

We study the electron-electron interaction induced energy-dependent inelastic carrier relaxation processes of fast electrons and their corresponding lifetimes in doped semiconductor coupled double quantum well nanostructures within the two subband approximation at zero temperature. The lifetime of these electrons is obtained and studied by using many-body theory based upon generalized multisubband GW approximation. The imaginary part of the full self-energy matrix is calculated by expanding in the dynamically RPA screened Coulomb interaction. We also comment on the e ects of structural asymmetry and tunneling between the layers.

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