✦ LIBER ✦

Electron-probe investigation of defects in semiconductor heterostructures

✍ Scribed by V. Sammelselg

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 103 KB
Volume: 21
Category: Article
ISSN: 0739-6260
DOI: 10.1016/0739-6260(90)90102-l

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electronic structure of semiconductor-me

Electronic structure of semiconductor-metal-semiconductor heterostructures

✍ Pierre Masri 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 301 KB

Probing electronic defect states in mang

Probing electronic defect states in manganite/SrTiO3 heterostructures by surface photovoltage spectroscopy

✍ E. Beyreuther; A. Thiessen; J. Becherer; S. Grafström; K. Dörr; L.M. Eng 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 576 KB

Theories of electronic structure in semi

Theories of electronic structure in semiconductor heterostructures

✍ L.J. Sham 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 644 KB

Ballistic electron emission testing of s

Ballistic electron emission testing of semiconductor heterostructures

✍ Gregory N. Henderson; Thomas K. Gaylord; Elias N. Glytsis; Phillip N. First; Wil 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 510 KB

Electron subband structure of HgCdTe met

Electron subband structure of HgCdTe metal-insulator-semiconductor heterostructures

✍ Junhao Chu; R. Sizmann; Kun Liu; I. Nachev; F. Koch 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 269 KB

Spin relaxation of electrons excited in

Spin relaxation of electrons excited in p-doped semiconductor heterostructures

✍ M.Z. Maialle; M.H. Degani 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 115 KB

We present a calculation of the spin-relaxation time of photoexcited electrons in p-doped quantum wells of GaAs with the spin-flip mechanism due to the electron-hole exchange interaction. We have observed shorter spin-relaxation times for electrons close to the conduction-band edge when including th