Electron Energy Levels in GaAs/Ga1–xAlxAs Heterojunctions II. Optical Properties
✍ Scribed by V. E. Godwin; M. Tomak
- Publisher
- John Wiley and Sons
- Year
- 1986
- Tongue
- English
- Weight
- 211 KB
- Volume
- 137
- Category
- Article
- ISSN
- 0370-1972
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📜 SIMILAR VOLUMES
Nonparabolicities (~k3,k ~) of the bulk band structure are taken into account in the calculation of subband Landau-levels in the n-inversion layer of GaAs/Gal\_xAlxAs heterostructures. We calculate the deviation of the cyclotron mass from the isotropic parabolic band case (~k2) for magnetic fields u
Binding energies of the ground state and of four excited states of a hydrogenic impurity in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite slabs of Ga~\_~AlxAs are calculated using a variational approach. The ground-state binding energy is calculated
Experimental results on high electric field longitudinal transport in GaAs/AlAs and \(G a A s / G a_{1-x} A l_{x} A s\) multiple quantum wells (MQW) are presented and compared with the prediction of a dielectric continuum model. We draw from our experiments the following four conclusions. (i) In \(