Electron states in GaAs/Ga1−xAlxAs heterostructures: Subband Landau-levels

✍ Scribed by G. Lommer; F. Malcher; U. Rössler

• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 335 KB
• Volume: 2
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(86)90031-5

✦ Synopsis

Nonparabolicities (~k3,k ~) of the bulk band structure are taken into account in the calculation of subband Landau-levels in the n-inversion layer of GaAs/Gal_xAlxAs heterostructures. We calculate the deviation of the cyclotron mass from the isotropic parabolic band case (~k2) for magnetic fields up to about 22 Tesla and the spin-splitting in the lowest (N=O,I,2) subband Landau-levels and the dependence of these quantities on electron and depletion charge density, on Al-concentration and the conduction band discontinuity. Our results are in quantitative agreement with ESR and cyclotron resonance data up to 15 Tesla.