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Electron-concentration dependence of absorption and refraction in n-In0.53Ga0.47As near the band-edge

โœ Scribed by D. Hahn; O. Jaschinski; H. -H. Wehmann; A. Schlachetzki; M. Von Ortenberg

Book ID
112815001
Publisher
Springer US
Year
1995
Tongue
English
Weight
449 KB
Volume
24
Category
Article
ISSN
0361-5235

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The magnetoresistance of antidot lattices and the magnetic field dependence of the threeterminal resistance of transverse electron focusing (TEF) devices is studied in a 2DEG in the lattice-matched In 0.53 Ga 0.47 As/InP heterojunction system, as a function of temperature. Ballistic effects are obse