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Electron beam doping in substrates of overlayer Si/substrate GaAs, SiGaAsP and evaporated GeSi

✍ Scribed by Takao Wada; Michihiko Takeda

Book ID
113278801
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
130 KB
Volume
21
Category
Article
ISSN
0168-583X

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The photoluminescence (PL) of undoped, Si-doped, and Be-doped GaAs nanowires (NWs) grown on Si substrates by molecular beam epitaxy was investigated. PL peaks of the undoped and Be-doped NWs were observed at higher energies than the bandgap energy of GaAs bulk. According to X-ray diffraction analysi