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Electron attachment to sulphur hexafluoride: Formation of stable SF6− at low pressure

✍ Scribed by Michael S. Foster; J.L. Beauchamp

Book ID: 103014790
Publisher: Elsevier Science
Year: 1975
Tongue: English
Weight: 509 KB
Volume: 31
Category: Article
ISSN: 0009-2614
DOI: 10.1016/0009-2614(75)85068-8

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✦ Synopsis

EkCt~on attachment to SF6 hss been Stidicd at low prcs;urc in the 8s phk by ion cyclotron resomnce (ICR) spec-'tioscopy. Formation of stable SF; tinder cbllision-free conditions is rationdzed on the basis of radiative relaxaticn by (SF;!*. The utility of ICR for inve$gatin~ electron attaclment at extr&mely low pressures is noted.

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