Electrochemistry of lanthanoid(III) complexes in dimethyl sulfoxide in the presence of n-Bu4N(acac) and n-Bu4N(dibm)

✍ Scribed by Akio Iwase; Yoshinori Araki; Reiko Takahashi

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 509 KB
• Volume: 35
• Category: Article
• ISSN: 0013-4686
• DOI: 10.1016/0013-4686(90)87070-i

✦ Synopsis

Abstrati-The electrochemical behavior of lanthanoid Ln(II1) complexes was investigated in Me,SO including n-Bu,N(acac) and n-Bu,N(dibm) as ligands (where acac is the acetylacetonate anion and dibm is the diisobutrylmethanate anion). Reversible one electron reduction waves corresponding to Ln(III) complexes+Ln(II) complexes were observed in the concentration range of 5-20mM of the ligands, including 1 mM lanthanoid perchlorates and 0.1 M TEAF'. The half-wave potentials of the lanthanoid complexes were -1.66 to -2.61 V US see in 0. I M TBAP in the presence of 5 mM of the ligands, depending on the lanthanoid(III) ions.