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Electroabsorption of thin AlAs/GaAs quantum well: Effect of Γ-X valley mixing

✍ Scribed by C.P. Chang; Yan-Ten Lu

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
377 KB
Volume
89
Category
Article
ISSN
0038-1098

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📜 SIMILAR VOLUMES

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The effects of mixing between the \(\Gamma\) and \(X\) valleys of the conduction band on the binding energy of a shallow donor in a thin type I AlAs/GaAs quantum well are investigated. The multivalley effective mass equations are solved variationally, with a separable hydrogen-like trial function. T

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Influence of Γ–X mixing on carrier transport and photoluminescence in GaAs/AlAs type-I superlattices
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We report on the effects of field-induced -X resonances on carrier transport and optical properties of GaAs/AlAs type-I short-period superlattices (SLs). We have observed an anomalously delayed photocurrent and 2-hh1 photoluminescence originating from X1-2 mixing. These observations clearly suggest