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Electroabsorption in a GaAs n-i-p-i structure with selective contacts fabricated by Focused Ion Molecular Beam Epitaxy

โœ Scribed by S. Vijendran; G.A.C. Jones; H.E. Beere; A.J. Shields


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
562 KB
Volume
53
Category
Article
ISSN
0167-9317

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