We have used high pressure to investigate resonant tunnelling in a single-barrier, n-i-n GaAs/ AlAs/GaAs diode with an embedded layer of InAs self-assembled quantum dots (SAQD). We have obtained convincing evidence for resonant tunnelling through individual G-valley-related electron states that we a
β¦ LIBER β¦
Electro-migration as a probe to study localization
β Scribed by Amal K. Das
- Publisher
- Elsevier Science
- Year
- 1981
- Tongue
- English
- Weight
- 215 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
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