Electrical transport in as ion-implanted si in the metal-insulator transition range

✍ Scribed by Chen Gang; R.W. Van Der Heijden; A.T.A.M. De Waele; H.M. Gijsman; F.P.B. Tielen

• Book ID: 104356736
• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 259 KB
• Volume: 165-166
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/s0921-4526(90)81001-5

✦ Synopsis

Resistance measurements are reported for silicon, ion-implanted with As, for various concentrations within a few percent of the metal-insulator transition at temperatures down to 0.1 K. At the lowest temperatures, the temperature dependence of the resistance is dominated by inhomogeneities in the dopant distribution. The observed current dependence of the resistance is discussed.