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Metal–insulator transition in boron-ion implanted type IIa diamond

✍ Scribed by Tshepe, T.; Prins, J.F.; Hoch, M.J.R.

Book ID
122277276
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
118 KB
Volume
8
Category
Article
ISSN
0925-9635

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## Abstract The low temperature electronic transport of highly boron‐doped nanocrystalline diamond films is studied down to 300 mK. The films show superconducting properties with critical temperatures __T__~c~ up to 2.1 K. The metal–insulator and superconducting transitions are driven by the dopant