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Electrical size effects of thin C54-TiSi2 films grown on silicon substrates

✍ Scribed by Jeng-Rern Yang; Juh Tzeng Lue


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
268 KB
Volume
65
Category
Article
ISSN
0038-1098

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Due to its outstanding electrical and mechanical properties, silicon carbide (SiC) is considered a leading semiconducting material for high temperature sensors. Since the piezoresistive effect in SiC is highly anisotropic and exhibits a dependence on the crystal orientation, the role of the substra