Electrical sensing of DNA hybridization in porous silicon layers
β Scribed by Archer, M. ;Fauchet, P. M.
- Book ID
- 105362460
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 149 KB
- Volume
- 198
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous silicon (PS) with different porosities were inserted in an Au/PS/p:Si/Al structure. Transport properties of this structure have been investi
## Abstract The dependence of humidity adsorption in porous silicon (PS) layers on the fabrication conditions (current density and oxidation) has been investigated. Asβprepared and additionally oxidized PS layers have been investigated using physical gas (N~2~) adsorption measurement at 77 K, water