Electrical properties study of porous silicon layer prepared by electrochemical etching
✍ Scribed by Andrzej Korcala; Wacław Bała; Artur Bratkowski; Piotr Borowski; Zbigniew Łukasiak
- Book ID
- 108233916
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 361 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0925-3467
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📜 SIMILAR VOLUMES
The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous silicon (PS) with different porosities were inserted in an Au/PS/p:Si/Al structure. Transport properties of this structure have been investi
Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt