Electrical resistivity and the Néel point of Mn100 − xCrx thin films

✍ Scribed by F Boakye; K.G Adanu

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 141 KB
• Volume: 39
• Category: Article
• ISSN: 0011-2275
• DOI: 10.1016/s0011-2275(99)00128-9

✦ Synopsis

Electrical resistivity measurements have been carried out on thermal evaporated Mn 100 À x Cr x x 0X5Y 1Y 2Y thin ®lms between 300 and 1.4 K using the van der Pauw four probe technique. A resemblance of the resistivity-temperature behaviour typical of the bulk a-Mn-Rich, specimen is obtained with the 0.5 at.% Cr in Mn. The N eel point of this specimen is shifted to 83 AE 1 K from the known value of 90 AE 1 K for a-Mn. The N eel point is shifted further to lower values as the concentration of Cr in Mn increases. The low temperature resistivity minimum may be interpreted as due to the presence of Cr impurities in the Mn ®lm giving rise to a distortion of the magnetic moment of the manganese atoms and thus leading to spin ¯uctuation scattering of the conduction electrons.