Electrical properties of γ-In2Se3 layers synthesized by solid state reaction between In and Se thin films
✍ Scribed by J.C. Bernède; S. Marsillac; A. Conan
- Book ID
- 114194179
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 532 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0254-0584
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## Polycrystalline thin films of y-I&Se, were obtained by sequentially evaporating In and Se on glass substrates followed by an annealing in flowing argon. The obtained films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and microprobe analysis
Tin monoselinide thin films were obtained by solid state reaction in vacuum. They were characterised by X-ray diffraction and subjected to resistivity and optical absorbance measurements. The data were analysed for obtaining activation energy and band gap. The effects of varying deposition parameter