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Electrical properties of CuInSe2 films prepared by evaporation of Cu2Se and In2Se3 compounds

✍ Scribed by Sung Chan Park; Se Han Kwon; Jin Soo Song; Byung Tae Ahn

Book ID
108472578
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
312 KB
Volume
50
Category
Article
ISSN
0927-0248

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Characterization of Cu(In,Ga) (S,Se)2thi
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## Abstract Cu(In,Ga) (S,Se)~2~ thin films were fabricated by sequential evaporation from CuGaSe~2~, CuInSe~2~ and In~2~S~3~ compounds for photovoltaic device applications. From XRF analysis, the Cu:(In + Ga):(S + Se) atomic ratio in all thin films was approximately 1:1:2. As the [In~2~S~3~]/([CuGa