Characterization of Cu(In,Ga) (S,Se)2thin films prepared by sequential evaporation from ternary compounds

✍ Scribed by Yamaguchi, T. ;Hatori, M. ;Niiyama, S. ;Miyake, Y.

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 239 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200669551

✦ Synopsis

Abstract

Cu(In,Ga) (S,Se)~2~ thin films were fabricated by sequential evaporation from CuGaSe~2~, CuInSe~2~ and In~2~S~3~ compounds for photovoltaic device applications. From XRF analysis, the Cu:(In + Ga):(S + Se) atomic ratio in all thin films was approximately 1:1:2. As the [In~2~S~3~]/([CuGaSe~2~] + [CuInSe~2~]) mole ratio in the evaporating materials increased, the S/(S + Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se)~2~ structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga) (S,Se)~2~ thin films had large and columnar grains. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)