n-Type In2S3 thin films prepared by gas chalcogenization of metallic electroplated indium: Photoelectrochemical characterization

Characterization of Cu(In,Ga) (S,Se)2thi

Characterization of Cu(In,Ga) (S,Se)2thin films prepared by sequential evaporation from ternary compounds

✍ Yamaguchi, T. ;Hatori, M. ;Niiyama, S. ;Miyake, Y. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 239 KB

## Abstract Cu(In,Ga) (S,Se)~2~ thin films were fabricated by sequential evaporation from CuGaSe~2~, CuInSe~2~ and In~2~S~3~ compounds for photovoltaic device applications. From XRF analysis, the Cu:(In + Ga):(S + Se) atomic ratio in all thin films was approximately 1:1:2. As the [In~2~S~3~]/([CuGa